Recent advancements in artificial intelligence (AI) are driving an unprecedented need for higher interconnect density in 3D-stacked semiconductor chips, with interconnect pitches scaling less than 1 micrometer. However, such ultrafine-scales cannot be achieved using current microbump technology, necessitating the development of novel approach such as ‘bumpless’ hybrid bonding that enables simultaneous copper-to-copper (Cu-Cu) and dielectric-dielectric (SiO2-SiO2) bonding. Despite its potential for next-generation AI chips, critical knowledge gaps exist in the fundamental understanding of the bonding processes and mechanisms in hybrid bonding. This research study focuses on understanding and improving Cu-Cu bonding by leveraging compressive stress between Cu pads in contact during annealing. Additionally, this research looks to foster collaboration among academia, national laboratories, and industry, providing hands-on training for students through an integrated collaboration network, preparing them for the future semiconductor workforce. This study also explores methods to lower bonding annealing temperature and reduce total energy consumption in chip manufacturing. Hybrid bonding experiments will be conducted at a Test, Assembly, and Packaging (TAP) facility of AIM Photonics, a Manufacturing USA institute focused on advancing integrated photonic circuit manufacturing. This research aims to develop optimal Cu-Cu bonding microstructures by correlating post-bonding microstr