# CREST Phase I Center for Ultrawide Bandgap Semiconductor Device Materials

> **NSF 01002526DB NSF RESEARCH & RELATED ACTIVIT** · Texas State University - San Marcos (TX) · $7,500,000

## Abstract

With support from the Centers of Research Excellence in Science and Technology (CREST) and the Engineering Research Centers (ERC), this project aims to facilitate a center for ultrawide bandgap semiconductor device materials and education.  The project plans to combine semiconductor materials fabrication, processing, and characterization strategies along with modern Artificial Intelligence (AI).  The researchers will focus on ultrawide bandgap (UWBG) semiconductors for next-generation devices operating at high power, high frequency, and under extreme conditions (temperature, radiation, corrosion, etc.).  The center will also train and develop the next generation of technology leaders comprised of graduate and undergraduate students, and postdoctoral researchers.  The project is part of a strategic goal of sustaining and developing research capacity to be a leading research institution in the UWBG semiconductor field within this decade.

The aims of the research are interconnected via three subprojects.  First, implement new fabrication, processing, and doping strategies to produce novel UWBG heterointerfaces.  Second, develop new scanning probe microscopy based UWBG characterization techniques to interrogate UWBG heterointerfaces.  And third, develop UWBG material aware AI-based models to investigate materials and heterostructures.  UWBG semiconductors are an emerging class of materials for future technological demands of tremendously large power handling capacity and high 

## Key facts

- **NSF award ID:** 2514718
- **Awardee organization:** Texas State University - San Marcos (TX)
- **SAM.gov UEI:** HS5HWWK1AAU5
- **PI:** Edwin L Piner
- **Primary program:** 01002526DB NSF RESEARCH & RELATED ACTIVIT
- **All programs:** CENTERS FOR RSCH EXCELL IN S&T
- **Estimated total:** $7,500,000
- **Funds obligated:** $7,500,000
- **Transaction type:** Standard Grant
- **Period:** 09/01/2025 → 08/31/2030

## Primary source

NSF Award Search: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2514718

## Citation

> US National Science Foundation, Award 2514718, CREST Phase I Center for Ultrawide Bandgap Semiconductor Device Materials. Retrieved via AI Analytics 2026-06-07 from https://api.ai-analytics.org/grant/nsf/2514718. Licensed CC0.

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