Nontechnical Summary Cubic boron arsenide holds exceptional promise for next-generation electronics with its unique pairing of ultrahigh thermal conductivity and high charge-carrier mobility. Compared to silicon, the bedrock of modern microelectronics, it delivers carrier mobility three times greater and thermal conductivity ten times higher. Transistors built from or integrated with cubic boron arsenide therefore switch faster and run cooler, directly addressing the heat-dissipation limits of silicon devices. Yet critical challenges persist such as controlling trace impurities, achieving reproducible n-type and p-type doping, and growing large, uniform single crystals. This research tackles those challenges head-on through an innovative growth technique that ensures high crystal quality and purity while enabling controlled dopiong. The research is integrated with semiconductor education and workforce development. The principal investigator embeds the project in the Graduate Certificate in Semiconductor Engineering and Manufacturing, supported by the Next-generation Microelectronics Manufacturing initiative. Students will experience hands-on materials engineering and device fabrication. Findings feed into undergraduate and graduate courses via the Nano Engineering Minor Option. Outreach through the Texas Center for Superconductivity and the Cullen College of Engineering via laboratory tours, technical lectures, and live demonstrations to engage learners from kindergarten t