# CAREER: Unlocking Programmable Doping in Wide-Bandgap Materials

> **NSF 01002930DB NSF RESEARCH & RELATED ACTIVIT** · Vanderbilt University (TN) · $691,527

## Abstract

Nontechnical Description

Modern society depends on efficient energy conversion across technologies that range from small motors to hyperscale data centers. These data centers can draw as much as 10 megawatts each. Thus, even small gains in power-converter efficiency translate into massive energy savings on the scale of terawatt-hours. A core challenge limiting progress in these systems is the inability to precisely control how and where dopants—impurities that determine electrical behavior—are introduced into semiconductors. Wide-bandgap semiconductors like gallium nitride and aluminum nitride offer superior performance compared to traditional silicon. However, their doping processes remain rigid and difficult to optimize. This research addresses that bottleneck by developing a programmable doping strategy. This is a way to insert dopants into already-grown semiconductor crystals with nanometer-scale spatial precision. This method removes the need for costly regrowth and allows electrical junctions to be formed wherever needed on a chip, improving energy efficiency while lowering production cost. The approach directly supports more efficient electrical inverters, power supplies, and next-generation computing systems. Beyond the technical contributions, the research integrates hands-on education and national outreach. A new university-level course module will introduce students to advanced doping and defect engineering in wide-bandgap materials. Undergraduate and high school students will participate in cleanroom-based experiments and modeling through established programs. Outreach efforts led by the Vanderbilt Institute of Nanoscale Science and Engineering will distribute classroom kits and digital content that bring these advanced concepts into K–12 classrooms. These combined activities broaden participation in semiconductor science and strengthen the pipeline of future researchers and engineers.

Technical Description

This research addresses a fundamental 

## Key facts

- **NSF award ID:** 2541951
- **Awardee organization:** Vanderbilt University (TN)
- **SAM.gov UEI:** GTNBNWXJ12D5
- **PI:** Mona ebrish
- **Primary program:** 01002930DB NSF RESEARCH & RELATED ACTIVIT
- **All programs:** CAREER-Faculty Erly Career Dev, Microelectronics and Semiconductors
- **Estimated total:** $691,527
- **Funds obligated:** $369,607
- **Transaction type:** Continuing Grant
- **Period:** 08/01/2026 → 07/31/2031

## Primary source

NSF Award Search: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2541951

## Citation

> US National Science Foundation, Award 2541951, CAREER: Unlocking Programmable Doping in Wide-Bandgap Materials. Retrieved via AI Analytics 2026-07-20 from https://api.ai-analytics.org/grant/nsf/2541951. Licensed CC0.

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