# CAREER: Degradation-Aware GaN Electronics for Mixed-Signal Integration in Extreme Environments

> **NSF 01002627DB NSF RESEARCH & RELATED ACTIVIT** · Columbia University (NY) · $500,000

## Abstract

Electronic systems are increasingly required to operate in extreme environments such as the surface of Venus, inside nuclear reactors, geothermal wells, and hypersonic aerospace platforms. Conventional silicon-based electronics fail at elevated temperatures because their electrical properties degrade rapidly above approximately 125 °C. Gallium nitride, a wide-bandgap semiconductor, offers superior thermal stability, radiation tolerance, and high-speed performance, making it a promising material for next-generation electronics in harsh environments. However, while individual gallium nitride transistors have demonstrated short-duration survival at high temperatures, little is understood about how complete circuits, particularly analog and mixed-signal systems that combine amplification, timing, and signal processing, degrade during prolonged exposure to heat and radiation. This project seeks to establish the scientific foundation needed to design reliable gallium nitride-based circuits that can operate above 500 °C for extended durations. The research will enable compact, energy-efficient electronics for planetary exploration, advanced energy systems, and distributed sensing in extreme conditions. The project also integrates research with education by developing a new graduate course on harsh environment electronics, mentoring undergraduate and high school researchers, and expanding outreach programs that introduce students to semiconductor reliability and extreme-environment engineering. By combining mission-driven research with workforce development, the project advances both national competitiveness in semiconductor technology and equitable access to engineering education.

The technical goal of this CAREER project is to develop a degradation-aware design framework for gallium nitride mixed-signal circuits operating under combined high-temperature and radiation stress. The research focuses on indium aluminum nitride/gallium nitride high electron mobility transist

## Key facts

- **NSF award ID:** 2542756
- **Awardee organization:** Columbia University (NY)
- **SAM.gov UEI:** F4N1QNPB95M4
- **PI:** Savannah Eisner
- **Primary program:** 01002627DB NSF RESEARCH & RELATED ACTIVIT
- **All programs:** Novel devices & vacuum electronics, CAREER-Faculty Erly Career Dev
- **Estimated total:** $500,000
- **Funds obligated:** $500,000
- **Transaction type:** Standard Grant
- **Period:** 07/01/2026 → 06/30/2031

## Primary source

NSF Award Search: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2542756

## Citation

> US National Science Foundation, Award 2542756, CAREER: Degradation-Aware GaN Electronics for Mixed-Signal Integration in Extreme Environments. Retrieved via AI Analytics 2026-07-09 from https://api.ai-analytics.org/grant/nsf/2542756. Licensed CC0.

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