# CAREER: Manipulating the Interfacial Structures of Additively Manufactured Semiconductor Chalcogenides

> **NSF 01002627DB NSF RESEARCH & RELATED ACTIVIT** · Texas Tech University (TX) · $534,821

## Abstract

Developing new manufacturing capacities for semiconductor materials is crucial for optoelectronics, sensing, computing, and energy conversion technologies. Metal chalcogenides are semiconductors with unique lattice structures and intriguing material properties; however, additive manufacturing of high-quality chalcogenides remains challenging. Most printed chalcogenides rely on organic surfactants that aid printability but leave insulating residues that hinder performance. This Faculty Early Career Development Program (CAREER) award supports research that advances the additive manufacturing of chalcogenide-based semiconductors by manipulating their interfacial structures and transport properties. By advancing the understanding of interfacial interactions between metal chalcogenides and emerging inorganic additives, this award will establish fundamental structure-property relationships and accelerate innovations in printed electronics and energy devices. By enabling new manufacturing capacities for semiconductor chalcogenides, it strengthens U.S. leadership in next-generation manufacturing through innovative strategies that enhance the performance, precision, and reliability of emerging semiconductor technologies. In addition, this project will extend its impact beyond campus to serve local and surrounding rural communities by creating accessible, hands-on opportunities for K-12 students and inspiring pathways into Science, Technology, Engineering, and Mathematics (STEM) careers, contributing to the future U.S. workforce.
 
While the printing of semiconductor chalcogenides promises novel energy and sensing electronics, a lack of understanding of interfacial interactions and subsequent difficulty in controlling undesired film porosity pose considerable manufacturing challenges, leading to poor conductivity and device performance. To overcome these limitations, research enabled by this award aims to establish interfacial design principles that enable pore-free, high-p

## Key facts

- **NSF award ID:** 2542773
- **Awardee organization:** Texas Tech University (TX)
- **SAM.gov UEI:** EGLKRQ5JBCZ7
- **PI:** Minxiang Zeng
- **Primary program:** 01002627DB NSF RESEARCH & RELATED ACTIVIT
- **All programs:** CAREER-Faculty Erly Career Dev, MATERIALS PROCESSING AND MANFG, Materials Engineering, Advanced Manufacturing, UNDERGRADUATE EDUCATION, GRADUATE INVOLVEMENT, MANUFACTURING
- **Estimated total:** $534,821
- **Funds obligated:** $534,821
- **Transaction type:** Standard Grant
- **Period:** 07/01/2026 → 06/30/2031

## Primary source

NSF Award Search: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2542773

## Citation

> US National Science Foundation, Award 2542773, CAREER: Manipulating the Interfacial Structures of Additively Manufactured Semiconductor Chalcogenides. Retrieved via AI Analytics 2026-07-03 from https://api.ai-analytics.org/grant/nsf/2542773. Licensed CC0.

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