Developing new manufacturing capacities for semiconductor materials is crucial for optoelectronics, sensing, computing, and energy conversion technologies. Metal chalcogenides are semiconductors with unique lattice structures and intriguing material properties; however, additive manufacturing of high-quality chalcogenides remains challenging. Most printed chalcogenides rely on organic surfactants that aid printability but leave insulating residues that hinder performance. This Faculty Early Career Development Program (CAREER) award supports research that advances the additive manufacturing of chalcogenide-based semiconductors by manipulating their interfacial structures and transport properties. By advancing the understanding of interfacial interactions between metal chalcogenides and emerging inorganic additives, this award will establish fundamental structure-property relationships and accelerate innovations in printed electronics and energy devices. By enabling new manufacturing capacities for semiconductor chalcogenides, it strengthens U.S. leadership in next-generation manufacturing through innovative strategies that enhance the performance, precision, and reliability of emerging semiconductor technologies. In addition, this project will extend its impact beyond campus to serve local and surrounding rural communities by creating accessible, hands-on opportunities for K-12 students and inspiring pathways into Science, Technology, Engineering, and Mathematics (STEM) careers, contributing to the future U.S. workforce. While the printing of semiconductor chalcogenides promises novel energy and sensing electronics, a lack of understanding of interfacial interactions and subsequent difficulty in controlling undesired film porosity pose considerable manufacturing challenges, leading to poor conductivity and device performance. To overcome these limitations, research enabled by this award aims to establish interfacial design principles that enable pore-free, high-p